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  • In situ ESR Observation of Interface Dangling Bond Formation Processes . . .
    We report the formation processes of interface dangling bonds ( centers) during initial oxidation of a clean Si (111) surface using an ultrahigh-vacuum electron-spin-resonance technique At the oxidation of one or two Si layer (s), the center density reached around , which is the same density as in the case of thick This result shows that the center density does not originate from the long
  • In situ ESR observation of interface dangling bond formation processes . . .
    We report on the first observation of the processes of formation of interface dangling bond (Pb centers) during amorphous SiO2 thin-film growth on a c…
  • In situ ESR observation of interface dangling bond formation processes . . .
    We report the formation processes of interface dangling bonds (Pb centers) during initial oxidation of a clean Si (111) surface using an ultrahigh-vacuum electron-spin-resonance technique At the oxidation of one or two Si layer (s), the Pb center density reached around 2 5-3 0 x 10 (12) cm (-2), which is the same density as in the case of thick SiO2 This result shows that the Pb center
  • In situ ESR observation of interface dangling bond formation . . .
    We report on the first observation of the processes of formation of interface dangling bond (P b centers) during amorphous SiO 2 thin-film growth on a clean Si (111) substrate After initial termination of the surface dangling bonds on the clean surface, rapid formation of P b centers was observed Even for a few monolayers of a-SiO 2 film (<0 4 nm), the number of P b centers reached the same
  • In situ ESR observation of interface dangling bond formation . . .
    We report the formation processes of interface dangling bonds (Pb centers) during initial oxidation of a clean Si (111) surface using an ultrahigh-vacuum electron-spin-resonance technique At the oxidation of one or two Si layer (s), the Pb center density reached around 2 5-3 0 x 10 (12) cm (-2), which is the same density as in the case of thick SiO2 This result shows that the Pb center
  • In situ ESR observation of interface dangling bond formation processes . . .
    We report on the first observation of the processes of formation of interface dangling bond (Pb centers) during amorphous SiO2 thin-film growth on a clean Si (1 1 1) substrate After initial
  • In situ ESR Observation of Interface Dangling Bond Formation Processes . . .
    We report the formation processes of interface dangling bonds (Pb centers) during initial oxidation of a clean Si(111) surface using an ultrahigh-vacuum electron-spin-resonance technique At the oxidation of one or two Si layer(s), the Pb center density reached around 2:5–3:0 1012 cm 2, which is the same density as in the case of thick SiO2 This result shows that the Pb center density does
  • In-situ ESR observation of dangling bond formation during very thin . . .
    The processes of formation of the interface dangling bond (P sub b centers) during amorphous SiO sub 2 thin-film growth, by oxidation, on a clean Si[111] substrate was performed Within 0 4 nm of the oxide layer, the number of P sub b centers rapidly reached the same order of magnitude as that in thick a-SiO sub 2 films These results indicate that the interface defects between Si and a
  • In situ ESR Observation of Interface Dangling Bond Formation Processes . . .
    We report the formation processes of interface dangling bonds ( P b centers) during initial oxidation of a clean Si(111) surface using an ultrahigh-vacuum electron-spin-resonance technique At the oxidation of one or two Si layer(s), the P b center density reached around 2 5 – 3 0 × 10 12 cm - 2 , which is the same density as in the case of thick SiO 2 This result shows that the P b
  • In situ ESR observation of interface dangling bond formation . . .
    Abstract We report on the first observation of the processes of formation of interface dangling bond (Pb centers) during amorphous SiO2 thin-film growth on a clean Si (1 1 1) substrate After initial termination of the surface dangling bonds on the clean surface, rapid formation of Pb centers was observed Even for a few monolayers of a-SiO2 film ( 0 4 nm ), the number of Pb centers reached





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