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  • mosfet - In an NMOS, does current flow from source to drain or vice . . .
    Conventional current flows from Drain to Source in an N Channel MOSFET The arrow shows body diode direction in a MOSFET with a parasitic diode between source and drain via the substrate This diode is missing in silicon on sapphire 2a is a JFet so different topology 2d is a MOSFET with no body diode I've never seen one
  • How to make a LTspice MOSFET Model?
    I want to make a MOSFET model having the following parameters in LTspice: $$\mu_nC_{ox} = 100 \mu A V^2 ; V_{th} = 0 5 V, \lambda = 0$$ and to define W and L, where I can change it from one design to another I do not have much knowledge about SPICE modelling commands, and so would appreciate a code or procedure that I can try to use to make
  • transistors - MOSFET Power Supply Explained - Electrical Engineering . . .
    The MOSFET is not amplifying voltage or current It is regulating the output voltage to be constant under various loads Z1 is the voltage reference and Q1 and Q2 compare Z1 with the voltage set by the divider R3 and R7 A MOSFET is used due to its low ON resistance
  • What is the difference between MOSFET transistor and normal transistor . . .
    [From Question]: MOSFET transistor and normal transistor A MOSFET is a normal transistor - it's a Metal-Oxide-Semiconductor Field-Effect Transistor A BJT is another normal transistor - a Bipolar Junction Transistor The question itself doesn't make much sense in that regard But lets assume for now you mean BJT when you say "normal"
  • How are MOSFET gate capacitances (Cgs, Cgd) calculated?
    Keep in mind that the physical mosfet is a symmetric device In the case of N-MOS, the terminal with a lower voltage is called the source (since it sources the charge carriers i e electrons) and the terminal at the higher voltage is called the drain
  • mosfet - How can I do a heatsink calculation and determine whether a . . .
    The power dissipated by the MOSFET is P = I 2 X R; I is the load current of electric door = 1 2 A; R is the R ds(on) of the MOSFET = 0 035 Ω This gives me a power dissipation of P = 1 2 A X 1 2 A X 0 035 Ω = 0 0504 W
  • mosfet - Vdss, Vds(max), BVdss and Vgss, Vgs(max) - Electrical . . .
    It seems that unfortunately different manufacturers use slightly different notation Usually V_DSS or V_DS(max) are the maximum allowable Drain-Source voltage according to manufacturer datasheet, the same for V_GS(max) but for Gate-Source voltage
  • mosfet - High side driver and Low side driver - Electrical Engineering . . .
    Since the gate of the MOSFET has to be V\$_{GS}\$ volts higher than the source, a special IC is needed to translate the logic level at the CTL lead into the much higher gate voltage Even if the N-channel was being used in a low-side configuration, the driver chip would be needed to properly drive the gate fast enough
  • mosfet - Schottky diode between the gate and source in half-bridge . . .
    When a MOSFET is being switched off, by the driver output going low, gate capacitance is being discharged, and current flows to the left, out of the gate and back into the driver In that direction, current experiences lower impedance due to the presence of diodes D1 and D5, resulting in the gate discharging faster than it charges, and thus the
  • Building a MOSFET current mirror - Electrical Engineering Stack Exchange
    For the left MOSFET, that is simply achieved by connecting gate and drain: if the gate source voltage is too small to admit the current, the gate will rise in voltage with the drain until it isn't If it is too large for saturation at the given current, voltage will fall until the channel is pinched off to saturation





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